SK Hynix Ramps Production of High Bandwidth Memory

SK Hynix Inc. (or ‘the Company’, www.skhynix.com) announced today that it is shipping mass production volumes of 1st generation High Bandwidth Memory (HBM1) based on SK hynix’s advanced 20nm-class DRAM process technology. HBM1 represents a groundbreaking leap in performance by enabling a 1,024 bit wide memory interface to achieve 128GB/second performance while reducing power by 50% over traditional GDDR5 DRAM solutions.

HBM1 utilizes through-silicon-via technology and microbumps to interconnect 4 DRAM die and 1 base die to achieve 1GB DRAM density per device. High Bandwidth Memory is designed to be assembled onto interposers allowing high speed memory interconnect to GPUs, CPUs, ASICs and FPGAs.

In addition to the mass production announcement, SK Hynix is pleased to recognize AMD as a key partner in enabling HBM1 technology. AMD announced the Radeon™ R9 Fury X, the world’s first graphics card with HBM technology in Los Angeles on June 16th. The AMD Radeon R9 Fury X graphics card utilizes 4GB HBM1 to achieve up to 512GB/second memory bandwidth performance while reducing memory subsystem power by up to 85%.

“AMD has pioneered the adoption of HBM1 technology in graphics applications achieving unprecedented memory bandwidth while reducing memory subsystem power” said Joe Macri, AMD Corporate Vice President and Product CTO, “Integrating AMD’s Graphics Processing Unit and HBM1 on a single 2.5D silicon interposer represents a major step forward in high performance graphics applications”.

“High Bandwidth Memory technology is the first JEDEC standard memory targeted for interposer system-in-package applications, effectively breaking down the memory wall barrier through tight integration of DRAM and high performance processors” said Kevin Widmer, SK Hynix America Vice President of Technical Marketing, “The performance requirements of emerging graphics, computing and networking applications are driving the demand for High Bandwidth Memory”.

SK Hynix is well positioned to support customer demand for High Bandwidth Memory as part of a broad portfolio of DRAM, NAND and SSD solutions. The 1.2V 1GB HBM1 device is available now in production quantities.

About SK Hynix Inc.
SK Hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips ("NAND Flash") and CMOS Image Sensors ("CIS") for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK Hynix is available at www.skhynix.com.

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